Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone
4.
0±0.
2 2.
0±0.
2 (0.
8) 3.
0±0.
2
unit: mm
I Features
G Diode is connected between gate and source G Low noise
voltage
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source
voltage Gate to Drain
voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VGDO IDSO IDGO IGSO PD Topr Tstg Ratings 12 −12 2 2 2 20 −10 to +70 −20 to +150 Unit V V mA mA mA mW °C °C
1 2 3 0.
45+0.
20 –0.
10 (2.
5) (2.
5) 0.
45+0.
20 –0.
10 0.
7±0.
1
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