Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification For switching
5.
0±0.
2 5.
1±0.
2 4.
0±0.
2
unit: mm
I Features
13.
5±0.
5
G Low noies, high gain G High gate to drain
voltage VGDO
0.
45 –0.
1
+0.
2
0.
45 –0.
1
+0.
2
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source
voltage Gate to Drain
voltage Gate to Source
voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55 −55 −55 ±30 10 250 125 −55 to +125 Unit V V V mA mA mW °C °C
1.
27
1.
27
1 2 3
2.
54±0.
15
I Electrical Characteristics (Ta = 25°C)
Parameter Drain to Sou...