Silicon MOS FETs (Small Signal)
2SK0615 (2SK615)
Silicon N-Channel MOS FET
For switching
Unit: mm
I Features
2.
0±0.
2
G Low ON-resistance G High-speed switching G Allowing to be driven directly by
CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
6.
9±0.
1
(0.
4)
2.
5±0.
1 (1.
0)
(1.
0) 3.
5±0.
1 2.
4±0.
2
(1.
5) (1.
5)
R 0.
9 R 0.
7
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source
voltage Gate to Source
voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
*
Symbol VDS VGSO ID IDP PD * Tch Tstg
Ratings 80 20 ±0.
5 ±1 1 150 −55 to +150
Unit V ...