2SK1157, 2SK1158
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-220AB
D G
1
2
3 1.
Gate 2.
Drain (Flange) 3.
Source
S
2SK1157, 2SK1158
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage 2SK1157 2SK1158 Gate to source
voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Symbol VDSS
Rati...