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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2275
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2275 is N-channel Power MOS Field Effect Transistor designed for high
voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.
0 ± 0.
3 4.
5 ± 0.
2 2.
7 ± 0.
2
FEATURES
φ3.
2 ± 0.
2
• • •
Low On-state Resistance RDS(on) = 2.
8 Ω MAX.
(VGS = 10 V, ID = 2.
0 A)
3 ± 0.
1 1 2 3 4 ± 0.
2 12.
0 ± 0.
2 13.
5 MIN.
0.
65 ± 0.
1
LOW Ciss
Ciss = 1 000 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source
Voltage Gate to Source
Voltage Drain Current (DC) Drain Current (pulse) VDSS VGSS ID (DC) ID (pulse)* 900 ± 30 ± 3.
...