N MOS UHF TV MOS Silicon Power MOS Field Effect Transistor 2SK2396A UHF PO = 100 W, GL = 12 dB, h D = 50 TYP VDD = 30 V, f = 860 MHz, IDQ = 150 mA 2, Pin = 40 dBm f = 470 860 MHz Unit mm TA = 25 D.
C.
VDS VGS ID PT Rth Tch Tstg 60 7 15 290 0.
6 200 65 200 V V A W /W TA = 25 IGSS VGS off IDSS gm PO hD GL VGS = 7 V VDS = 5 V, ID = 50 mA VDS= 60 V VDS = 5 V, ID = 3 A, D ID = 100 mA f = 860 MHz, VDD = 30 V IDQ = 150 mA 2, Pin = 40 dBm f = 860 MHz, VDD = 30 V IDQ = 150 mA 2, Pin = 30 dBm MIN.
1.
5 2.
0 90 48 10 TYP.
100 50 12 MAX.
1 4 2 mA V mA S W dB P12404JJ1V0DS00 February 1997 N 1 1997 2SK2396A 2 2SK2396A ZIN       VDD = 30 V, IDQ = 150 mA 2, Pin = 40 dBm ...

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