2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-534C (Z) 4th.
Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.
12Ω typ.
• 4V gate drive devices.
• High speed switching
Outline
DPAK |1
4
4
D 1 2 G 3
S
1 2
3
1.
Gate 2.
Drain 3.
Source 4.
Drain
2SK2796(L), 2SK2796(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 60 ±20 5 20 5 5 2.
14 20 150 –55 to +150
U...