2SK2802
Silicon N Channel MOS FET Low Frequency Power Switching
ADE-208-537C (Z) 4th.
Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.
2 Ω typ.
(VGS = 4 V, I D = 100 mA) • 2.
5V gate drive devices.
• Small package (MPAK)
Outline
MPAK
3 1
D
2
G
1.
Source 2.
Gate 3.
Drain
S
2SK2802
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse) Pch Tch Tstg
Note1 Note2
Ratings 30 ±10 0.
5 1.
0 150 150 –55 to +150
Unit V V A A mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to sour...