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2SK2809-01MR

Part Number 2SK2809-01MR
Manufacturer Fuji Electric
Description N-channel MOS-FET
Published Mar 30, 2005
Detailed Description 2SK2809-01MR FAP-IIIB Series Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanch...
Datasheet 2SK2809-01MR




Overview
2SK2809-01MR FAP-IIIB Series Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 0,01Ω 50A 50W Outline Drawing Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max.
Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 50 200 ±20 453 50 150 -55 ~ +150 * L=0,241mH, VCC=24V Equivalent Circuit Unit V A A...






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