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MOS FIELD EFFECT TRANSISTOR
2SK3113
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high
voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER 2SK3113 2SK3113-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z)
FEATURES
• Low on-state resistance RDS(on) = 4.
4 Ω MAX.
(VGS = 10 V, ID = 1.
0 A) • Low gate charge QG = 9 nC TYP.
(VDD = 450 V, VGS = 10 V, ID = 2.
0 A) • Gate
voltage rating ±30 V • Avalanche capability ratings (TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source
Voltage (VGS = 0 V) ...