2SK3134(L), 2SK3134(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-721B (Z) 3rd.
Edition February 1999 Features
• Low on-resistance R DS(on) = 4 mΩ typ.
• Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
D 1 1
2
3
G
2
3
1.
Gate 2.
Drain 3.
Source 4.
Drain
S
2SK3134(L),2SK3134(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note 3 Note 3 Note 2 Note 1
Ratings 30 ±20 75 3...