2SK3290
Silicon N Channel MOS FET High Speed Switching
ADE-208-744 C (Z) 4th.
Edition.
June 1999 Features
• Low on-resistance R DS = 0.
455 Ω typ.
(VGS = 10 V , ID = 250 mA) R DS = 0.
9 Ω typ.
(VGS = 4 V , ID = 100 mA) • 4 V gate drive device.
• Small package (MPAK)
Outline
MPAK
3 1
D
2
G
1.
Source 2.
Gate 3.
Drain
S
2SK3290
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note 2 Note1
Ratings 30 ±20 500 2 500 400 150 –55 to +150
Unit V V mA A mA mW °C °C
1.
PW ...