2SK3310
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3310
Switching Regulator Applications
Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 0.
48 Ω (typ.
) High forward transfer admittance: |Yfs| = 4.
3 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement model: Vth = 3.
0~5.
0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source
voltage Drain-gate
voltage (RGS = 20 kΩ) Gate-source
voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 450 450 ±30 10 40 40 222 10 4 150 −55~150 Unit V V V A W mJ A mJ °C °C
Drain power dissipation (Tc = 25°C) Single puls...