com
Power
MOSFETs
2SK3318
Silicon N-channel power
MOSFET
(0.
7)
Unit: mm
15.
0±0.
3 11.
0±0.
2 5.
0±0.
2 (3.
2)
For switching ■ Features
• Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown
21.
0±0.
5
φ 3.
2±0.
1
(3.
5) Solder Dip
15.
0±0.
2
2.
0±0.
2 1.
1±0.
1
2.
0±0.
1 0.
6±0.
2
■ Absolute Maximum Ratings TC = 25°C
Parameter Drain-source surrender
voltage Gate-source surrender
voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25°C Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 600 ±30 ±15 ±60 112.
5 100 3 150 −55 to +150 °C °C Unit V V A A mJ W
16.
2±0.
5
5.
45±0.
3 10.
9±0.
5 1 2 3
1: G...