2SK3376TK
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3376TK
For ECM
• Application for Ultra-compact ECM
0.
22±0.
05 1.
2±0.
05 0.
8±0.
05 0.
32±0.
05 3 2 0.
1±0.
05
Unit: mm
Absolute Maximum Ratings (Ta=25°C)
0.
45 0.
45 1.
4±0.
05
Characteristic Gate-Drain
voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature www.
DataSheet4U.
com Storage temperature range
Symbol VGDO IG PD Tj Tstg
Rating -20 10 100 125 −55~125
Unit V mA mW °C
Note:
Using continuously under heavy loads (e.
g.
the application of high temperature/current/
voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if t...