DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3435
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES • Super low on-state resistance
RDS(on)1 = 14 mΩ MAX.
(VGS = 10 V, ID = 40 A) RDS(on)2 = 22 mΩ MAX.
(VGS = 4.
0 V, ID = 40 A) • Low Ciss: Ciss = 3200 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3435
TO-220AB
2SK3435-S
TO-262
2SK3435-ZJ 2SK3435-Z
TO-263 TO-220SMD Note
Note TO-220SMD package is produced only in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source
Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source
Voltage (VD...