DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3479
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3479 2SK3479-S 2SK3479-ZJ 2SK3479-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote
FEATURES
• Super low on-state resistance: RDS(on)1 = 11 mΩ MAX.
(VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX.
(VGS = 4.
5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP.
• Built-in gate protection diode
Note TO-220SMD package is produced only in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source
Voltage (VGS = 0 V) Gate to Source
Voltage (VDS = 0 V) Drain Curr...