Ordering number : ENN8279
2SK3492
2SK3492
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
N-Channel Silicon
MOSFET
General-Purpose Switching Device Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature
Symbol VDSS VGSS
ID IDP
PD
Tch Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate-to-Source Leakage Current Cutoff
Voltage Forward Transfer Admittance
Sta...