Silicon Junction FETs (Small Signal)
2SK3546J
Silicon N-Channel
MOSFET
For switching ■ Features
0.
27±0.
02 (0.
50)(0.
50) 1.
60+0.
05 –0.
03 1.
00±0.
05 3
0.
80±0.
05
Unit: mm
0.
12+0.
03 –0.
01
1.
60±0.
05
0.
85+0.
05 –0.
03
0 to 0.
02
Parameter Drain-source
voltage Gate-source
voltage (Drain open) Drain current Peak drain current Power dissipation Channel temperature Storage temperature
Symbol VDS VGSO ID IDP PD Tch Tstg
Rating 50 ±7 100 200 125 125 −55 to +125
Unit V
5˚
mA mA mW °C °C
1: Gate 2: Source 3: Drain SSMini3-F1 Package
Marking Symbol: 5F
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Drain-source surrender
voltage Drain-source cutoff current Gate-source cutoff current Gate ...