Silicon Junction FETs (Small Signal)
2SK3547
Silicon n-channel
MOSFET
Unit: mm
For switching ■ Features
• High-speed switching • Wide frequency band • Gate-protection diode built-in
0.
33+0.
05 –0.
02 3
0.
10+0.
05 –0.
02
(0.
40) (0.
40) 0.
80±0.
05 1.
20±0.
05 5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter Drain-source
voltage Gate-source
voltage (Drain open) Drain current Peak drain current Power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Rating 50 ±7 100 200 100 125 −55 to +125 Unit V V mA mA mW °C °C
0.
15 min.
0.
23+0.
05 –0.
02
1
2
0 to 0.
01
0.
52±0.
03
5˚
1: Gate 2: Source 3: Drain SSSMini3-F1 Package
Marking Symbol: 5F
■ Electrical Charact...