Power
MOSFETs
2SK3628
Silicon N-channel power
MOSFET
For hihg-speed switching
15.
0±0.
3 11.
0±0.
2
Unit: mm
5.
0±0.
2 (3.
2)
(0.
7)
■ Features
• Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender
voltage Gate-source surrender
voltage Drain current Peak drain current Avalanche energy capability *
VDSS VGSS
ID IDP EAS
230 ±30 20 80 570
V V A A mJ
Power
dissipation
Ta = 25°C
Channel temperature
Storage temperature
PD 100 3
Tch 150 Tstg −55 to +150
W
°C °C
Note) *: L = 2.
23 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25°C
16.
2±0.
5 (3.
2)...