SMD Type
com
Transistors IC
Silicon N-channel Power
MOSFET 2SK3636
TO-263
+ 0 .
1 1 .
2 7 -0 .
1
Unit: mm
+0.
1 1.
27-0.
1 +0.
2 4.
57-0.
2
Features
Avalanche energy capacity guaranteed: EAS Gate-source surrender
voltage VGSS = High-speed switching: tf = 50 ns No secondary breakdown 20 mJ 30 V guaranteed
+ 0 .
2 8 .
7 -0 .
2
+0.
1 1.
27-0.
1
0.
1max
+0.
1 0.
81-0.
1
+ 0 .
2 5 .
2 8 -0 .
2
2.
54
+0.
2 -0.
2 +0.
1 5.
08-0.
1
+ 0 .
2 2 .
5 4 -0 .
2
+ 0 .
2 1 5 .
2 5 -0 .
2
2.
54
+0.
2 0.
4-0.
2
Absolute Maximum Ratings Ta = 25
Parameter Drain-source surrender
voltage Gate-source surrender
voltage Drain current Peak drain current Avalanche energy capability Power dissipation Ta = 25 Power dissipation Cha...