www.
DataSheet4U.
com
Power
MOSFETs
2SK3637
Silicon N-channel power
MOSFET
15.
5±0.
5
Unit: mm
φ 3.
2±0.
1 5˚ 3.
0±0.
3 5˚
For PDP/For high-speed switching
(10.
0) 26.
5±0.
5
(4.
5)
• Low on-resistance, low Qg • High avalanche resistance
(2.
0)
5˚ (4.
0) 2.
0±0.
2 1.
1±0.
1 0.
7±0.
1 5.
45±0.
3 10.
9±0.
5 5˚ 5˚
■ Absolute Maximum Ratings TC = 25°C
Parameter Drain-source surrender
voltage Gate-source surrender
voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25°C Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 200 ±30 50 200 2 000 100 3 150 −55 to +150 °C °C Unit V
3.
3±0.
3
A A mJ W
5˚
1
2
3
5.
5±0.
3
V
18.
6±0.
5 (2.
0) Solder Dip
1: Gate 2: Drain 3: Source T...