SMD Type
com
IC
MOSFET
MOS Field Effect Transistor 2SK3638
TO-252
+0.
15 1.
50-0.
15
Features
Low on-state resistance RDS(on)1 = 8.
5 m RDS(on)2 = 15 m MAX.
(VGS = 10 V, ID = 32 A)
+0.
2 9.
70-0.
2
Unit: mm
+0.
1 2.
30-0.
1 +0.
8 0.
50-0.
7
+0.
15 6.
50-0.
15 +0.
2 5.
30-0.
2
Low Ciss: Ciss = 1100 pF TYP.
Built-in gate protection diode
+0.
1 0.
80-0.
1
+0.
15 0.
50-0.
15
0.
127 max
2.
3
+0.
15 4.
60-0.
15
+0.
1 0.
60-0.
1
+0.
28 1.
50-0.
1
+0.
25 2.
65-0.
1
+0.
15 5.
55-0.
15
MAX.
(VGS = 4.
5 V, ID = 18 A)
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source
voltage Gate to source
voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature ...