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2SK3761
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y )
2SK3761
unit•F‚•‚•
Switching Regulator Applications
3.
84•}0.
2
3.
84•} 0 .
2
10.
5 10.
5 max max
4.
7max 4.
7 max
1.
3 6.
6 max
6.
6 max.
• • • •
Low drain-source ON resistance: R DS (ON) = 0.
9Ħ (typ.
) High forward transfer admittance: |Yfs| = 5.
0S (typ.
) Low leakage current: IDSS = 100 ƒÊ A (V DS = 600 V) Enhancement-mode: V th = 2.
0~4.
0 V (V DS = 10 V, ID = 1 mA)
1.
3
13.
4 min 13.
4 min.
3.
9 max 3.
9 max.
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source
voltage Drain-gate
voltage (RGS = 20 kΩ ) Gate-source
voltage DC Drain current (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EA...