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2SK3857TK
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3857TK
For ECM
• Application for Ultra-compact ECM
0.
22±0.
05 1.
2±0.
05 0.
8±0.
05 0.
32±0.
05 3 2 0.
1±0.
05
Unit: mm
0.
45 0.
45
1.
4±0.
05
0.
9±0.
1
Absolute Maximum Ratings (Ta=25°C)
Characteristic Gate-Drain
voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C °C
1
0.
395±0.
03
TESM3
IDSS CLASSIFICATION A-Rank 140~240µA B-Rank 210~350µA
1.
Drain 2.
Source 3.
Gate
JEDEC JEITA TOSHIBA
2-1R1A
Weight: 2.
2mg (typ.
)
Marking
Equivalent Circuit
D
Type Name
9
IDSS Classification...