2SK410
Silicon N-Channel MOS FET
Application
HF/VHF power amplifier
Features
• • • • • • • High breakdown
voltage You can decrease handling current.
Included gate protection diode No secondary–breakdown Wide area of safe operation Simple bias circuitry No thermal runaway
Outline
2SK410
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1.
Value at TC = 25°C Symbol VDSS VGSS ID Pch* Tch Tstg
1
Ratings 180 ±20 8 120 150 –55 to +150
Unit V V A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Power output Drain efficiency Drain to source breakdown
voltage Gate to source...