2SK4115
com
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSⅣ)
2SK4115
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 1.
6 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 5.
0 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
3.
3max.
2.
0 9.
0 20.
0±0.
3 2.
0 Ф3.
2±0.
2 1.
0 4.
5
Unit: mm
15.
9max.
Enhancement model: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA)
Characteristic Drain-source
voltage Drain-gate
voltage (RGS = 20 kΩ) Gate-source
voltage Drain current DC Pulse (Note 1) (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg
Rating 900 900 ±30 7 21 150 491 7 15 150 −55~150
Unit V
1.
8max.
1.
0 -0.
2...