Silicon MOS FETs (Small Signal)
2SK615
Silicon N-Channel MOS FET
For switching
unit: mm
s Features
q Low ON-resistance q High-speed switching q Allowing to be driven directly by
CMOS and TTL q M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
1.
5
0.
4
6.
9±0.
1 1.
5 R0.
9 R0.
9
2.
4±0.
2 2.
0±0.
2 3.
5±0.
1
2.
5±0.
1 1.
0
1.
0
1.
0±0.
1
R
0.
7
0.
85
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source
voltage Gate to Source
voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
*
0.
55±0.
1
0.
45±0.
05
1.
25±0.
05
Symbol VDS VGSO ID IDP PD
*
Ratings 80 20 ±0.
5 ±1 1 150 ...