isc N-Channel
MOSFET Transistor
DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source
Voltage-
: VDSS=450V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed especially for high
voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
450
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
10
A
Ptot
Total Dissipation@TC=25℃
100
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature ...