Silicon Junction FETs (Small Signal)
2SK662
Silicon N-Channel Junction FET
For low-frequency amplification
unit: mm
2.
1±0.
1
s Features
q High mutual conductance gm q Low noise type q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.
65
0.
425
1.
25±0.
1
0.
425
1
2.
0±0.
2
1.
3±0.
1
0.
65
3
2
s Absolute Maximum Ratings (Ta = 25°C)
0.
2
Parameter Drain to Source
voltage Gate to Drain
voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature
Symbol VDSX VGDO ID IG PD Tj Tstg
Ratings 30 −30 20 10 150 125 −55 to +125
Unit V V mA mA mW °C °C
1: Source 2: Drain 3: Gate
0.
9±0.
1
0.
7±0.
...