isc N-Channel
MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 100V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High speed power switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
100
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
10
A
Ptot
Total Dissipation@TC=25℃
50
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SK749
isc website:www.
iscsemi.
com
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isc N-Channel
Mosfet Transistor
·EL...