isc N-Channel
MOSFET Transistor
DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source
Voltage-
: VDSS=900V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed especially for high
voltage.
·high speed applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
900
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
2
A
Ptot
Total Dissipation@TC=25℃
80
W
Tj
Max.
Operating Junction Temperature
80
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SK959
isc website：www.
iscsemi.
cn
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transist...