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2SK971
Silicon N-Channel MOS FET
Application
TO–220AB
High speed power switching
Features
• • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
2
1
2
3
1
1.
Gate 2.
Drain (Flange) 3.
Source 3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 60 ±20 15 60 15 40 150 –55 to +150 Unit V V A A...