2STBN15D100
Low
voltage NPN power Darlington transistor
Features
■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
■ Linear and switching industrial equipment
Description
The device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration.
TAB
3 1
D²PAK
Figure 1.
Internal schematic diagrams
R1 = 8 kΩ R2 = 150 Ω
Table 1.
Device summary Order code
2STBN15D100T4
Marking BN15D100
Package D²PAK
January 2010
Doc ID 16117 Rev 2
Packaging Tape and reel
1/7
www.
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Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Sym...