Power F-MOS FETs
2SK3028 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-
voltage drive q High electrostatic breakdown
voltage
unit: mm
15.
5±0.
5
4.
5
φ3.
2±0.
1
10.
0
3.
0±0.
3
26.
5±0.
5
18.
6±0.
5
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment www.
DataSheet4U.
com q Switching power supply
2.
0 1.
2
5˚ 4.
0 2.
0±0.
2 1.
1±0.
1
2.
0
5˚ 5˚
0.
7±0.
1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown
voltage Gate to Source
voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 60 ±...