N-channel Enhancement Mode
MOSFET
3075
DESCRIPTION
The uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) Ω @ VGS=4.
5V
RDS(ON) Ω @ VGS=10V High Power and current handing capability Lead free product is acquired Surface Mount Package
D D DD
Application
PWM applications Load switch Power management
SSSG
PIN1
DATASHEET
3424
PIN1
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-source
Voltage
Gate-source
Voltage
Drain Current
TC=25℃ TC=1...