HGT1N30N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N30N60A4D is a MOS gated high
voltage switching device combining the best features of a
MOSFETs and a bipolar transistor.
These devices have the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state
voltage drop varies only moderately between 25oC and 150oC.
This IGBT is ideal for many high
voltage switching applications com operating at high frequencies where low conduction losses are essential.
This device has been optimized for high frequency switch mode power supplies.
Formerly Developmental Ty...