JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-251 Plastic-Encapsulate Transistors
3DD13001
FEATURES Power dissipation PCM: 1.
2 W (Tamb=25℃)
1.
BASE 2.
COLLECTOR 3EMITTER
TRANSISTOR (NPN)
TO-251
Collector current ICM: 0.
2 A Collector-base
voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation
voltage Base-emitter s...