isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 100V(Min.
) ·DC Current Gain-
: hFE= 20(Min.
)@IC= 2A ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= 0.
8V(Max)@ IC= 2.
5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier,DC-DC converter and regulated
power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
150
V
VCEO
Collector-Emitter
Voltage
100
V
VEBO
Emitter-Base
Voltage
4
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Dissipation@TC=75℃
50
W
TJ
Junction Temperature
175...