INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification 3DD102
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 100V(Min.
) ·DC Current Gain-
: hFE= 20(Min.
)@IC= 2A ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= 0.
8V(Max)@ IC= 2.
5A
APPLICATIONS ·Designed for power amplifier , DC Transform T-Shirt
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
150 V
VCEO
Collector-Emitter
Voltage
100 V
VEBO
Emitter-Base
Voltage
6V
IC Collector Current-Continuous
5A
PC Collector Power Dissipation@TC=75℃ 50
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Re...