Ordering number : ENN6139
3LP01M
P-Channel Silicon
MOSFET
3LP01M
Ultrahigh-Speed Switching Applications
Features
• • •
Package Dimensions
unit : mm 2158
[3LP01M]
0.
425
0.
3
Low ON-resistance.
Ultrahigh-speed switching.
2.
5V drive.
0.
15
3
2.
1 1.
250
0 to 0.
1
0.
425
1 2 0.
65 0.
65 2.
0
0.
3 0.
9
0.
6
0.
2
1 : Gate 2 : Source 3 : Drain SANYO : MCP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -30 ± 10 --0.
1 --0.
4 0.
15 150 --5...