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Ordering number : ENN6646
3LP01N
P-Channel Silicon
MOSFET
3LP01N
Ultrahigh-Speed Switching Applications
Features
• • •
Package Dimensions
unit : mm 2178
5.
0 4.
0
Low ON-resistance.
Ultrahigh-speed switching.
2.
5V drive.
[3LP01N]
4.
0
0.
45 0.
5
0.
6 2.
0
5.
0
0.
45
0.
44
1
2
3
14.
0
1 : Source 2 : Drain 3 : Gate
1.
3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
1.
3
SANYO : NP
Ratings -30 ± 10 --0.
1 --0.
4 0.
4 150 --55 to +150
...