com
Ordering number : EN8649
3LP03SS
P-Channel Silicon
MOSFET
3LP03SS
Features
• • • •
General-Purpose Switching Device Applications
Low ON-resistance.
High-speed switching.
2.
5V drive.
High resistance to damage from ESD (TYP 300V) [with a protection diode connected between the gate and source].
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage (*1) Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings --30 --10 --0.
25 --1 0.
15 150 --55 to +150 Unit V V A A W °C °C
(*1) : Note, wh...