_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No.
216
OOcrBLJD
Solid State Division
Power Transistors 2N4036 2N4037 2N4314
40391 40394
+.
R .
i"'" , .
• ~
40394 H-1375
j~-'J~ _, vr---\.
o 40391 H-1468
~
2N4036 2N4037 2N4314
JEOEC TO-39
H-1381
Medium-Power Silicon P-N-P Planar Transistors
General·Purpose Types for Industrial and Commercial Applications
Features:
• 2N4036} are p-n-p complements of {2N2102A&
2N4037
2N3053
• Gain-bandwidth product tfT) =60 MHz min
• High breakdown
voltages
• Maximum-area-of-operation curves
• Planar construction provides low noise and low leakage
• Low saturation
voltages
• High pulsed beta at high collector current
These devices a...