NGTB40N120IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state
voltage and minimal switching loss.
The IGBT is well suited for resonant or soft switching applications.
Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward
voltage.
Features
• Low Saturation
Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Optimized for Low Case Temperature in IH Cooker Application • Low Gate Charge • These are Pb−Free Devices
Typical Applicatio...