Shenzhen Tuofeng Semiconductor Technology co.
, LTD
4407
P-Channel Enhancement-Mode
MOSFET (-30V, -12A)
PRODUCT SUMMARY
VDSS
ID
RDS(on) (m-ohm) Max
13 @ VGS = -20V ,ID=-10A
-30V -12A
20 @ VGS = -10V ,ID=-10A 28 @ VGS = -5V ,ID=-10A
Features
· Advanced Trench Process Technology · High Density Cell Design for Ultra Low On-Resistance · Lead free product is acquired
·
SOP-8
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol VDS VGS
ID
Drain-Source
Voltage Gate-Source
Voltage Drain Current @TA=25oC
Parameter
IDM Drain Current (Pulsed) a IAR Avalanche Current EAR Repetitive Avalanche Energy L=0.
3mH
Total Power Dissipation @TA=25oC PD Total Power Dissipation @TA=75oC I...