Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd 4616
Product Summary
N-Channel VDS= 30V ID= 8A (VGS=10V) RDS(ON) 20mΩ (VGS=10V) 28mΩ (VGS=4.
5V)
P-Channel -30V -7A (VGS=-10V) RDS(ON) 22mΩ (VGS=-10V) 40mΩ (VGS=-4.
5V)
SOIC-8
D2 D1
Top View
S2 D2 G2 D2 S1 D1 G1 D1
G2
G1
S2 S1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol Max n-channel
Drain-Source
Voltage
VDS 30
Gate-Source
Voltage
VGS ±20
Continuous Drain Current
TA=25°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.
1mH C
ID
IDM IAS, IAR EAS, EAR
8
40 19 18
Max p-channel -30 ±20
-7
-40 27 36
Units V V
A
A mJ
Power Dissipation B TA=25°C Juncti...