Shenzhen TuoFeng Semiconductor Technology co.
, LTD
4946
Dual N-Channel High Density Trench
MOSFET
PRODUCT SUMMARY
VDSS ID
FEATURES
RDS(on) (mΩ) Max
52 @ VGS = 10V
P
●Super high dense cell trench design for low RDS(on).
●Rugged and reliable.
●Surface Mount package.
5.
0A 60V 4.
0A
75 @ VGS = 4.
5V
P
D1
D2
SOP-8
S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2
S1 S2 G1 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current Maximum Power Dissipation
a a a
Symbol
VDS VGS ID IDM IS PD
Limit
60 ± 20 5.
0 26 3.
1 2.
0 1.
2
Unit
V
V
A
A A
W
TA=25ºC TA=75ºC Aval...