4AK18
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) ≤ 0.
38 , VGS = 10 V, I D = 1 A R DS(on) ≤ 0.
53 , VGS = 4 V, I D = 1 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp driver
4AK18
Outline
SP-10
3 D 4 G 2G
5 D 6 G
7 D 8 G
9 D
12 34 56 78 9 10
1S
S 10
1, 10.
Source 2, 4, 6, 8.
Gate 3, 5, 7, 9.
Drain
Absolute Maximum Ratings (Ta = 25°C) (1 Unit)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Ch...